OPTICAL NONLINEARITY AND BISTABILITY IN SILICON

被引：24
作者：
EICHLER, HJ
BRAND, T
GLOTZ, M
SMANDEK, B
机构：
[1] Technische Univ Berlin, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1988年 / 150卷 / 02期
关键词：
Infrared Radiation--Nonlinear Optical Effects - Laser Beams--Effects - Lasers; Solid State - Light--Nonlinear Optical Effects - Optical Devices--Switching;
D O I：
10.1002/pssb.2221500258
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The large number of nonlinear optical effects observed in silicon is referenced. Special emphasis is given to laser-induced absorption and refraction due to free-carrier generation and optical heating produced by Nd:YAG-laser at 1.06 μm. Nonlinear silicon etalons exhibit high-order optical bistability. Switching powers down to 1 mw are obtained with the injection of an additional photocurrent. Two-wave mixing is discussed as an alternative switching scheme.
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页码：705 / 718
页数：14
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