DETERMINATION OF THE SMALL-SIGNAL PARAMETERS OF AN ALGAAS GAAS MODFET

被引：11
作者：
ESKANDARIAN, A
机构：
[1] Martin Marietta, Baltimore, MD, USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 11期
关键词：
ELECTRONS - MATHEMATICAL TECHNIQUES -- Perturbation Techniques - QUANTUM THEORY - SEMICONDUCTING ALUMINUM COMPOUNDS -- Applications - SEMICONDUCTING GALLIUM ARSENIDE -- Applications;
D O I：
10.1109/16.7389
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The small-signal equivalent-circuit parameters of an AlGaAs/GaAs MODFET are derived by a first-order perturbation around the two-region DC model of an FET. The contribution of the AlGaAs electrons is included by using an accurate charge-control model. The charge-control model uses a mixed quantum-mechanical and classical approach to determine the density of channel electrons and AlGaAs neutral donors as a function of gate voltage. The model predictions show good agreement with experimental results for both low and high drain bias voltages.
引用
收藏
页码：1793 / 1801
页数：9
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