IMPROVED MOBILITY IN INXGA1-XASYP1-Y ALLOYS USING HIGH-TEMPERATURE LIQUID-PHASE EPITAXY

被引：18
作者：
BENCHIMOL, JL
QUILLEC, M
SLEMPKES, S
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 01期
关键词：
D O I：
10.1016/0022-0248(83)90254-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：96 / 100
页数：5
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