ON THE EFFECTIVE ELECTRON MASS IN SUPERLATTICES OF III-V SEMICONDUCTORS IN THE PRESENCE OF A QUANTIZING MAGNETIC-FIELD

被引：10

作者：

GHATAK, KP

MITRA, B

GHOSHAL, A

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1989年 / 154卷 / 02期

关键词：

D O I：

10.1002/pssb.2221540247

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K121 / K126

页数：6

共 22 条

[1] Abramowitz M., 1964, HDB MATH FUNCTIONS N
[2] EFFECT OF NONPARABOLICITY ON OHMIC MAGNETORESISTANCE IN SEMICONDUCTORS
ARORA, VK
JAAFARIAN, M
[J]. PHYSICAL REVIEW B, 1976, 13 (10): : 4457 - 4461
[3] Blakemore J. S., 1982, J APPL PHYS, V52, p123(R)
[4] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P79
[5] BUTCHER PN, 1983, ELECTRONS CRYSTALLIN, P103
[6] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO
CAPASSO, F
TSANG, WT
HUTCHINSON, AL
WILLIAMS, GF
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40
[7] OSCILLATORY EFFECTIVE MASS IN DEGENERATE NARROW-GAP SEMICONDUCTORS IN A QUANTIZING MAGNETIC-FIELD
CHAKRAVARTI, AN
CHOWDHURY, AK
GHATAK, KP
GHOSH, S
DHAR, A
[J]. APPLIED PHYSICS, 1981, 25 (02): : 105 - 108
[8] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS
ESAKI, L
TSU, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &
[9] ESAKI L, 1972, 11TH P INT C PHYS SE, P31
[10] THEORETICAL-ANALYSIS OF THE CARRIER EFFECTIVE MASS IN INVERSION-LAYERS ON II-VI SEMICONDUCTORS
GHATAK, KP
CHATTERJEE, N
MONDAL, M
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1987, 139 (01): : K25 - K30