THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON

被引：19
作者：
OURMAZD, A
WILSHAW, PR
BOOKER, GR
机构：
来源：
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词：
D O I：
10.1016/0378-4363(83)90313-3
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：600 / 605
页数：6
相关论文
共 7 条
[1]  
ANSTIS GR, 1981, I PHYS C SERIES, V60, P15
[2]  
DONOLATO C, 1978, OPTIK, V52, P19
[3]   MOTION OF PARTIAL DISLOCATIONS [J].
GOTTSCHALK, H .
JOURNAL DE PHYSIQUE, 1979, 40 :127-131
[4]  
OURMAZD A, 1979, PHYS STAT SOL A, V55, P751
[5]  
OURMAZD A, IN PRESS
[6]   INTERPRETATION OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICON [J].
PASEMANN, L ;
BLUMTRITT, H ;
GLEICHMANN, R .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (01) :197-209
[7]   A NEW ELECTRON-PARAMAGNETIC-RES CENTER DUE TO DISLOCATIONS IN PHOSPHORUS DOPED SILICON [J].
WEBER, E ;
ALEXANDER, H .
SOLID STATE COMMUNICATIONS, 1981, 37 (05) :371-373
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