THE BASE CURRENT RECOMBINING AT THE OXIDIZED SILICON SURFACE

被引：20
作者：
HILLEN, MW [1 ]
HOLSBRINK, J [1 ]
机构：
[1] GRONINGEN STATE UNIV,DEPT APPL PHYS,9747 AG GRONINGEN,NETHERLANDS
来源：
SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 05期
关键词：
D O I：
10.1016/0038-1101(83)90102-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：453 / 463
页数：11
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