SURFACE STATES ON CLEAN SILICON

被引：32

作者：

HEILAND, G

LAMATSCH, H

机构：

来源：

SURFACE SCIENCE | 1964年 / 2卷

关键词：

D O I：

10.1016/0039-6028(64)90038-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：18 / 25

页数：8

共 15 条

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[7]

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[8] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J].

LANDER, JJ ;

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JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2089-&

[9] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :729-&

[10] STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].

LANDER, JJ ;

GOBELL, GW ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+

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