FORMATION AND SCHOTTKY BEHAVIOR OF MANGANESE SILICIDES ON NORMAL-TYPE SILICON

被引：90
作者：
EIZENBERG, M [1 ]
TU, KN [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期
关键词：
D O I：
10.1063/1.330029
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：6885 / 6890
页数：6
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