NEW MODEL OF THE TEMPERATURE-DEPENDENCE OF THE 1.4-EV EMISSION BAND OF AMORPHOUS-SILICON

被引：9
作者：
BOULITROP, F
DUNSTAN, DJ
CHENEVASPAULE, A
机构：
来源：
PHYSICAL REVIEW B | 1982年 / 25卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.25.7860
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：7860 / 7862
页数：3
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