METAL-INSULATOR-SUPERCONDUCTOR FIELD-EFFECT-TRANSISTOR USING SRTIO3 YBA2CU3OY HETEROEPITAXIAL FILMS

被引:44
作者
FUJII, T
SAKUTA, K
AWAJI, T
MATSUI, K
HIRANO, T
OGAWA, Y
KOBAYASHI, T
机构
[1] Department of Electrical Engineering, Osaka University, Toyonaka, Osaka, 560, 1-1, Machikaneyama
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 5B期
关键词
MISFET; YBA2CU3OY; SRTIO3; FIELD-EFFECT TRANSISTOR; EPITAXY; SUPERCONDUCTIVITY;
D O I
10.1143/JJAP.31.L612
中图分类号
O59 [应用物理学];
学科分类号
摘要
Planar-type metal-insulator-superconductor field-effect-transistors (MISFET) were fabricated and their current modulation characteristics were investigated. The FET had a structure of Al-gate metal/(100)SrTiO3-gate insulator/(001)YBa2Cu3Oy-channel, where the oxide layers were grown by selective heteroepitaxy employing pulsed ArF excimer laser deposition. The FET gate was 10-mu-m long and 100-mu-m wide. Apparent field-effect modulation of drain current was seen in both the normal (T > T(c)) and superconducting (T < T(c)) states. In the superconducting state, not only the critical current but also flux-flow resistance were appreciably changed according to the applied gate voltage.
引用
收藏
页码:L612 / L615
页数:4
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