NEAR BAND-EDGE PHOTOLUMINESCENCE FROM SI1-XGEX/SI SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：48
作者：
STEINER, TD
HENGEHOLD, RL
YEO, YK
GODBEY, DJ
THOMPSON, PE
POMRENKE, GS
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] USAF,OFF SCI RES,WASHINGTON,DC 20332
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期
关键词：
D O I：
10.1116/1.586155
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sharp, well-resolved near band-edge photoluminescence (PL) has been observed from long-period Si1-xGex/Si superlattices grown by molecular-beam epitaxy, including PL from a 120 angstrom Si/40 angstrom Si1-xGex sample. The sharp PL is due to shallow bound excitons (BE), and consists of a no-phonon (NP) line as well as phonon-assisted lines. The exciton binding energies obtained from the temperature dependence of the BE(NP) lines are in the range of 4-6 meV.
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页码：924 / 926
页数：3
相关论文
共 19 条
  • [1] THERMAL DISSOCIATION OF EXCITONS BOUNDS TO NEUTRAL ACCEPTORS IN HIGH-PURITY GAAS
    BIMBERG, D
    SONDERGELD, M
    GROBE, E
    [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3451 - +
  • [2] THE OPTICAL-PROPERTIES OF LUMINESCENCE-CENTERS IN SILICON
    DAVIES, G
    [J]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1989, 176 (3-4): : 83 - 188
  • [3] DETECTION OF MAGNETIC-RESONANCE ON PHOTOLUMINESCENCE FROM A SI/SI1-XGEX STRAINED-LAYER SUPERLATTICE
    GLASER, E
    TROMBETTA, JM
    KENNEDY, TA
    PROKES, SM
    GLEMBOCKI, OJ
    WANG, KL
    CHERN, CH
    [J]. PHYSICAL REVIEW LETTERS, 1990, 65 (10) : 1247 - 1250
  • [4] GLASER E, 1990, 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3, P885
  • [5] HOUGHTON DC, 1991, SILICON MOL BEAM EPI, P299
  • [6] PHOTOLUMINESCENCE CHARACTERIZATION OF SIMGEN SUPERLATTICES
    KALLEL, MA
    ARBET, V
    KARUNASIRI, RPG
    WANG, KL
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 214 - 216
  • [7] KENNEDY TA, SILICON MOL BEAM EPI, P271
  • [8] MEASUREMENT OF THE BAND-GAP OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES
    LANG, DV
    PEOPLE, R
    BEAN, JC
    SERGENT, AM
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1333 - 1335
  • [9] PHOTO-LUMINESCENCE OF SI-RICH SI-GE ALLOYS
    MITCHARD, GS
    MCGILL, TC
    [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5351 - 5363
  • [10] INTENSE PHOTOLUMINESCENCE BETWEEN 1.3-MU AND 1.8-MU-M FROM STRAINED SI1-XGEX ALLOYS
    NOEL, JP
    ROWELL, NL
    HOUGHTON, DC
    PEROVIC, DD
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1037 - 1039
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