NEAR BAND-EDGE PHOTOLUMINESCENCE FROM SI1-XGEX/SI SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：48

作者：

STEINER, TD

HENGEHOLD, RL

YEO, YK

GODBEY, DJ

THOMPSON, PE

POMRENKE, GS

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] USAF,OFF SCI RES,WASHINGTON,DC 20332

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1116/1.586155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sharp, well-resolved near band-edge photoluminescence (PL) has been observed from long-period Si1-xGex/Si superlattices grown by molecular-beam epitaxy, including PL from a 120 angstrom Si/40 angstrom Si1-xGex sample. The sharp PL is due to shallow bound excitons (BE), and consists of a no-phonon (NP) line as well as phonon-assisted lines. The exciton binding energies obtained from the temperature dependence of the BE(NP) lines are in the range of 4-6 meV.

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页码：924 / 926

页数：3

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