CHARGE PUMP POWERS HIGH-SIDE SWITCH

被引：0

作者：

DAVIS, D

机构：

来源：

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：276 / &

共 50 条

[31] High-side current sensor monitors negative rail
Yang, K
EDN, 2003, 48 (08) : 96 - 96
[32] Simple circuit provides high-side current sensing
Ossmann, M
Kazay, B
EDN, 2000, 45 (21) : 200 - 200
[33] High-Side NMOS Power Switch and Bootstrap Driver for High-Frequency Fully-Integrated Converters with Enhanced Efficiency
Huang, Cheng
Cheng, Lin
Mok, Philip K. T.
Ki, Wing-Hung
2013 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2013, : 693 - 696
[34] High-side current sensor has period output
Sutterlin, G
EDN, 2002, 47 (05) : 122 - +
[35] High-side gate driver for 60V
Herklots, T
ELECTRONIC ENGINEERING, 1998, 70 (858): : 22 - 22
[36] Study on High-Side LDMOS Energy Capability Improvement
Lin, Yun-Jung
Yang, Shao-Ming
Chien, Ting Yao
Wu, Ching-Yuan
Aanand
INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM) 2016 PROCEEDINGS OF TECHNICAL PAPERS, 2016,
[37] Study on High-side LDMOS energy capability Improvement
1600, Institute of Electrical and Electronics Engineers Inc., United States (00):
[38] A high voltage charge pump circuit for H bridge high side drive
Wang, Siying
Huang, Shengming
Wei, Tiantong
PROCEEDINGS OF 2023 7TH INTERNATIONAL CONFERENCE ON ELECTRONIC INFORMATION TECHNOLOGY AND COMPUTER ENGINEERING, EITCE 2023, 2023, : 209 - 214
[39] Monitor high-side current without an external supply
Damle, V
EDN, 2001, 46 (05) : 126 - +
[40] HIGH-SIDE CURRENT SENSE CAUSES LITTLE ERROR
LANGNER, CL
EDN, 1995, 40 (06) : 50 - 50