EPITAXIAL-GROWTH OF CHROMIUM ON CU(111) SUBSTRATES

被引:8
|
作者
GAIGHER, HL
VANDERBERG, NG
MALHERBE, JB
机构
关键词
D O I
10.1016/0040-6090(85)90342-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:139 / 148
页数:10
相关论文
共 50 条
  • [31] EPITAXIAL-GROWTH OF LEAD AND THALLIUM ON (111) SILVER AND COOPER
    RAWLINGS, KJ
    GIBSON, MJ
    DOBSON, PJ
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (14) : 2059 - &
  • [32] EPITAXIAL-GROWTH OF CRSI2 ON (111)SI
    SHIAU, FY
    CHENG, HC
    CHEN, LJ
    APPLIED PHYSICS LETTERS, 1984, 45 (05) : 524 - 526
  • [33] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (001), (111)A, AND (111)B GAAS SUBSTRATES
    ASAI, H
    OE, K
    JOURNAL OF CRYSTAL GROWTH, 1983, 62 (01) : 67 - 74
  • [34] COBALT DISILICIDE EPITAXIAL-GROWTH ON THE SILICON (111) SURFACE
    PIRRI, C
    PERUCHETTI, JC
    GEWINNER, G
    DERRIEN, J
    PHYSICAL REVIEW B, 1984, 29 (06): : 3391 - 3397
  • [35] EPITAXIAL-GROWTH OF VSI2 ON (111)SI
    CHIEN, CJ
    CHENG, HC
    NIEH, CW
    CHEN, LJ
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1887 - 1889
  • [36] PARTIAL EPITAXIAL-GROWTH OF COBALT GERMANIDES ON (111)GE
    HSIEH, YF
    CHEN, LJ
    MARSHALL, ED
    LAU, SS
    APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1588 - 1590
  • [37] LOCALIZED EPITAXIAL-GROWTH OF CRGE ON (111) AND (001) GERMANIUM
    HSIEH, YF
    CHEN, LJ
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2821 - 2824
  • [38] Epitaxial growth of AIN on Cu(111) substrates using pulsed laser deposition
    Inoue, S
    Okamoto, K
    Matsuki, N
    Kim, TW
    Fujioka, H
    JOURNAL OF CRYSTAL GROWTH, 2006, 289 (02) : 574 - 577
  • [39] EPITAXIAL-GROWTH OF LAF3 ON GAAS(111)
    SINHAROY, S
    HOFFMAN, RA
    ROHATGI, A
    FARROW, RFC
    RIEGER, JH
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 273 - 275
  • [40] EPITAXIAL-GROWTH OF FCC FE ON CU(100)
    ONELLION, M
    THOMPSON, MA
    ERSKINE, JL
    DUKE, CB
    PATON, A
    SURFACE SCIENCE, 1987, 179 (01) : 219 - 229