A NUMERICAL APPROACH TO THE SOLUTION OF THE BOLTZMANN TRANSPORT-EQUATION FOR THE ANALYSIS OF HOT-ELECTRON EFFECTS IN SEMICONDUCTORS

被引：0
|
作者：
GNUDI, A
VENTURA, D
BACCARANI, G
机构：
[1] Dipartimento di Elettronica, Informatica e Sistemistica Università di Bologna, 40136 Bologna
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90076-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A one-dimensional n-p-n BJT has been simulated by expanding the Boltzmann Transport Equation (BTE) in spherical harmonics. The solution provides the energy distribution of electrons as a function of position in the entire device with a reasonable CPU time. We compare the average velocity and energy with results of the hydrodynamic model.
引用
收藏
页码：367 / 376
页数：10
相关论文
共 50 条
12345