SPIN-ECHO EFFECT IN A VARIABLE-GAP SEMICONDUCTOR

被引:0
作者
VOLKOV, AS
LIPKO, AL
MERETLIEV, SM
TSARENKOV, BV
机构
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:557 / 560
页数:4
相关论文
共 50 条
[21]   CHARACTERISTICS OF RADIATIVE RECOMBINATION IN A VARIABLE-GAP SEMICONDUCTOR WITH A HIGH BAND-GAP GRADIENT [J].
KOVALENKO, VF ;
PEKA, GP ;
SHEPEL, LG .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (09) :1099-1100
[22]   Oscillations of Polarization of Recombination Radiation of a Variable-Gap Semiconductor in a Magnetic Field [J].
Volkov, A. S. ;
Ekimov, A. I. ;
Nikishin, S. A. ;
Safarov, V. I. ;
Tsarenkov, B. V. ;
Tsarenkov, G. V. .
JETP LETTERS, 2023, 118 (SUPPL 1) :S18-S20
[23]   Oscillations of Polarization of Recombination Radiation of a Variable-Gap Semiconductor in a Magnetic Field [J].
A. S. Volkov ;
A. I. Ekimov ;
S. A. Nikishin ;
V. I. Safarov ;
B. V. Tsarenkov ;
G. V. Tsarenkov .
JETP Letters, 2023, 118 :S18-S20
[24]   PHOTON TRANSPORT OF CARRIERS IN VARIABLE-GAP METAL-SEMICONDUCTOR STRUCTURES [J].
GABARAEV, RS ;
KRAVCHENKO, AF .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (07) :750-752
[25]   EFFECTIVE RADIATIVE LIFETIME OF NONEQUILIBRIUM CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR. [J].
Tsarenkov, G.V. ;
Reznikov, B.I. .
Soviet physics. Semiconductors, 1984, 18 (10) :1167-1170
[26]   PHOTOSENSITIVITY OF A VARIABLE-GAP STRUCTURE [J].
VUL, AY ;
PETROSYAN, SG ;
SHIK, AY ;
SHMARTSEV, YV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (04) :401-403
[27]   Photocarrier extraction effect in thin variable-gap photoresistors [J].
Sokolovsky, BS ;
Pysarevsky, VK ;
Kovtun, RM .
MATERIALS FOR INFRARED DETECTORS, 2001, 4454 :254-261
[28]   CIRCULAR PHOTOGALVANIC EFFECT IN A VARIABLE-GAP HETEROJUNCTION STRUCTURE [J].
ABAKUMOV, VN ;
REZNIKOV, BI ;
TSARENKOV, GV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (02) :160-165
[29]   CATHODOLUMINESCENCE OF VARIABLE-GAP SEMICONDUCTORS [J].
PEKA, GP ;
TOKALIN, OA ;
DRYAPIKO, NK .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (06) :683-685
[30]   THEORY OF A VARIABLE-GAP LASER [J].
KAZARINOV, RF ;
TSARENKOV, GV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02) :178-182