TEMPERATURE-DEPENDENT EBIC DIFFUSION-LENGTH MEASUREMENTS IN SILICON

被引：14

作者：

KITTLER, M

SEIFERT, W

SCHRODER, KW

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 93卷 / 01期

关键词：

D O I：

10.1002/pssa.2210930173

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K101 / K104

页数：4

共 13 条

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