EPITAXIAL-GROWTH AND ELECTRICAL-PROPERTIES OF FERROELECTRIC PB(ZR0.9TI0.1)O3 FILMS BY REACTIVE SPUTTERING

被引：27

作者：

OKAMURA, T ^{[1
]}

ADACHI, M ^{[1
]}

SHIOSAKI, T ^{[1
]}

KAWABATA, A ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,SAKYO KU,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 05期

关键词：

PZT; FERROELECTRIC; THIN FILM; SPUTTERING; MEMORY;

D O I：

10.1143/JJAP.30.1034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric Pb(Zr0.9Ti0.1)O3 thin films have been successfully obtained on the pt/(0001)sapphire substrates and the Pt/SiO2/(100)Si substrates by reactive sputtering of the multimetal target. The films with perovskite structure have been grown at substrate temperatures of 600-620-degrees-C. The epitaxial films have been obtained on the Pt/(0001) sapphire substrates and the oriented. films have been obtained on the Pt/SiO2/(100)Si substrates. The crystallinity of the Pb(Zr0.9Ti0.1)O3 film depended on the substrate temperature and the crystallinity of the platinum film used as the bottom electrode. The films showed ferroelectricity, and the switching speed was measured as 50 ns at 8 V for the 0.60-mu-m film on the Pt/SiO2/(100)Si substrate.

引用

页码：1034 / 1037

页数：4

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