1.0-MU-M N-WELL CMOS BIPOLAR TECHNOLOGY

被引：5

作者：

MOMOSE, H ^{[1
]}

SHIBATA, H ^{[1
]}

SAITOH, S ^{[1
]}

MIYAMOTO, J ^{[1
]}

KANZAKI, K ^{[1
]}

KOHYAMA, S ^{[1
]}

机构：

[1] TOSHIBA CORP,DIV INTEGRATED CIRCUIT,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期

关键词：

D O I：

10.1109/JSSC.1985.1052286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：137 / 143

页数：7

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