MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP

被引：53
作者：
MCFEE, JH
MILLER, BI
BACHMANN, KJ
机构：
[1] BELL TEL LABS INC,HOLMDEL,NJ 07733
[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 02期
关键词：
D O I：
10.1149/1.2133277
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：259 / 272
页数：14
相关论文
共 48 条
[1]   LIQUID ENCAPSULATED CZOCHRALSKI PULLING OF INP CRYSTALS [J].
BACHMANN, KJ ;
BUEHLER, E ;
SHAY, JL ;
STRNAD, AR .
JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) :389-406
[2]  
BACHMANN KJ, 1975, 5TH P INT S GAAS REL, P121
[3]  
BARRETT C, 1966, STRUCTURE METALS, P451
[4]  
BAUER E, 1969, TECHNIQUES METALS RE, V2, pCH15
[5]   GROWTH OF A GAAS-GAAIAS SUPERLATTICE [J].
CHANG, LL ;
ESAKI, L ;
HOWARD, WE ;
LUDEKE, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01) :11-16
[6]   FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES [J].
CHO, AY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :S31-&
[7]   SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS [J].
CHO, AY ;
HAYASHI, I .
SOLID-STATE ELECTRONICS, 1971, 14 (02) :125-&
[8]   EPITAXIAL GROWTH OF GALLIUM PHOSPHIDE ON CLEAVED AND POLISHED (111) CALCIUM FLUORIDE [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :782-&
[9]   GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&
[10]   MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2780-&
12345