DISSOCIATION MECHANISM FOR SOLID-PHASE EPITAXY OF SILICON IN SI[100]/PD2SI/SI (AMORPHOUS) SYSTEM

被引：17
|
作者：
PRETORIUS, R [1 ]
LIAU, ZL [1 ]
LAU, SS [1 ]
NICOLET, MA [1 ]
机构：
[1] CALTECH,PASADENA,CA 91125
来源：
APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 09期
关键词：
D O I：
10.1063/1.89156
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：598 / 600
页数：3
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