DISSOCIATION MECHANISM FOR SOLID-PHASE EPITAXY OF SILICON IN SI[100]/PD2SI/SI (AMORPHOUS) SYSTEM

被引：17

作者：

PRETORIUS, R ^{[1
]}

LIAU, ZL ^{[1
]}

LAU, SS ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 09期

关键词：

D O I：

10.1063/1.89156

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：598 / 600

页数：3

共 4 条

[1] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS [J].

CANALI, C ;

CAMPISANO, SU ;

LAU, SS ;

LIAU, ZL ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2831-2836

[2] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J].

CHU, WK ;

MAYER, JW ;

NICOLET, MA ;

BUCK, TM ;

AMSEL, G ;

EISEN, F .

THIN SOLID FILMS, 1973, 17 (01) :1-41

[3] KINETICS OF INITIAL-STAGE OF SI TRANSPORT THROUGH PD-SILICIDE FOR EPITAXIAL-GROWTH [J].

LIAU, ZL ;

CAMPISANO, SU ;

CANALI, C ;

LAU, SS ;

MAYER, JW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1696-1699

[4] SOLID-PHASE EPITAXIAL-GROWTH OF SI MESAS FROM AL METALLIZATION [J].

SANKUR, H ;

MCCALDIN, JO ;

DEVANEY, J .

APPLIED PHYSICS LETTERS, 1973, 22 (02) :64-66

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