STRESS EVOLUTION AND POINT-DEFECT GENERATION DURING OXIDATION OF SILICON

被引：30

作者：

CHARITAT, G

MARTINEZ, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 04期

关键词：

D O I：

10.1063/1.333142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：909 / 913

页数：5

共 25 条

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