OBSERVATION OF SI2 IN A CHEMICAL VAPOR-DEPOSITION REACTOR BY LASER-EXCITED FLUORESCENCE

被引：50

作者：

HO, P

BREILAND, WG

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.94548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：51 / 53

页数：3

共 14 条

[1]

BLOEM J, 1978, CURRENT TOPICS MATER, pCH4

[2] PULSED UV LASER RAMAN-SPECTROSCOPY OF SILANE IN A LINEAR-FLOW CHEMICAL VAPOR-DEPOSITION REACTOR [J].

BREILAND, WG ;

KUSHNER, MJ .

APPLIED PHYSICS LETTERS, 1983, 42 (04) :395-397

[3] THE DEPOSITION OF SILICON FROM SILANE IN A LOW-PRESSURE HOT-WALL SYSTEM [J].

CLAASSEN, WAP ;

BLOEM, J ;

VALKENBURG, WGJN ;

VANDENBREKEL, CHJ .

JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) :259-266

[4]

COLTRIN ME, J ELECTROCHEM SOC

[5] THE SPECTRUM OF THE SI-2 MOLECULE [J].

DOUGLAS, AE .

CANADIAN JOURNAL OF PHYSICS, 1955, 33 (12) :801-810

[6] ABSORPTION SPECTRUM OF SI2 IN VISIBLE AND NEAR-ULTRAVIOLET REGION [J].

DUBOIS, I ;

LECLERCQ, H .

CANADIAN JOURNAL OF PHYSICS, 1971, 49 (23) :3053-&

[7]

HITCHMAN ML, 1979, 7TH P INT C CVD, P59

[8] OBSERVATION OF HSICL IN A CHEMICAL VAPOR-DEPOSITION REACTOR BY LASER-EXCITED FLUORESCENCE [J].

HO, P ;

BREILAND, WG .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :125-126

[9] SURFACE PROCESSES IN LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

HOTTIER, F ;

CADORET, R .

JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) :199-206

[10] MODELING OF CHEMICAL VAPOR-DEPOSITION .1. GENERAL-CONSIDERATIONS [J].

KOREC, J ;

HEYEN, M .

JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) :286-296

← 1 2 →