STRAIN RELAXATION IN EPITAXIAL SI1-XGEX LAYERS DURING SOME SILICIDATION PROCESSES

被引：2
作者：
NUR, O
SARDELA, MR
RADAMSON, HH
WILLANDER, M
HANSSON, GV
HATZIKONSTANTINIDOU, S
机构：
[1] Dept. Of Physics and Measurement Technology, Linköping University, Linköping
[2] Dept. Of Solid State Electronics, Royal Institute of Technology, Kista, 164 21
来源：
PHYSICA SCRIPTA | 1994年 / 54卷
关键词：
D O I：
10.1088/0031-8949/1994/T54/070
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Strain relaxation in Si1-xGex epitaxial layers is investigated after the reaction of Co and Pt with strained SiGe alloy. The epitiaxial SiGe alloy studied has a Ge fraction ranging between x = 5% to 22%. The strain in the Si1-xGex is evaluated using multi-crystal high resolution x-ray diffraction mapping in reciprocal space (MC-HRXRD). The results show that for Co in order to keep the strain in Si1-xGex unaffected, a sacrificial Si layer is needed. The direct reaction of 40nm Co on Si0.9Ge0.1 can lead to defect formation and 40% strain relaxation. This is in contrast to Pt/S1-xGex reaction, where negligible relaxation was observed.
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收藏
页码：294 / 296
页数：3
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