OPTOELECTRONIC ISOLATOR FOR MICROWAVE APPLICATIONS

被引：5

作者：

HUFF, DB ^{[1
]}

ANTHES, JP ^{[1
]}

机构：

[1] SANDIA NATL LABS,TECH STAFF,ALBUQUERQUE,NM 87185

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1990年 / 38卷 / 05期

关键词：

D O I：

10.1109/22.54925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new family of devices is described. The microwave characteristics of high-speed semiconductor laser diodes and photodiodes allow the design of low-loss isolators at high frequencies. A prototype optoelectronic isolator has achieved, for the first time, forward transmission gain without the need for auxiliary amplification. The unilateral transformation between electrical and optical regimes has produced a device with high isolation (> 80 dB) and 0.13 dB gain. Prototype characteristics are compared to analytic models. © 1990 IEEE

引用

页码：571 / 576

页数：6

共 11 条

[1]

ANDERSON RW, 1967, HEWLETT-PACKARD J, V18, P1

[2]

ANTHES JP, 1987, SPRINGER VERLAG SERI, V24, P285

[3]

ANTHES JP, 1988, MAY P IEEE ISE S ALB, P109

[4] HIGH-SPEED GAAIAS/GAAS P-I-N PHOTO-DIODE ON A SEMI-INSULATING GAAS SUBSTRATE [J].