MEASUREMENT OF THE THERMAL-RESISTANCE OF PACKAGED LASER-DIODES

被引：0
作者：
HUGHES, JJ
GILBERT, DB
HAWRYLO, FZ
机构：
[1] RCA Laboratories, Princeton, NJ 08540, United States
来源：
RCA REVIEW | 1985年 / 46卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
LASERS, SEMICONDUCTOR
引用
收藏
页码：200 / 213
页数：14
相关论文
共 50 条
[21]   NOISE MECHANISMS IN LASER-DIODES [J].
NILSSON, BO .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :2139-2150
[22]   THERMAL-RESISTANCE AT INTERFACES [J].
SWARTZ, ET ;
POHL, RO .
APPLIED PHYSICS LETTERS, 1987, 51 (26) :2200-2202
[23]   LASER-DIODES GROWING UP [J].
WERTH, DL .
PHOTONICS SPECTRA, 1989, 23 (04) :133-&
[24]   BEATING DIVERGENCE IN LASER-DIODES [J].
不详 .
PHOTONICS SPECTRA, 1983, 17 (05) :63-&
[25]   SIMULATOR SAVES LASER-DIODES [J].
GILDENHUYS, B .
EDN MAGAZINE-ELECTRICAL DESIGN NEWS, 1984, 29 (05) :242-&
[26]   PULSE CIRCUITS FOR LASER-DIODES [J].
FABIAN, M .
F&M-FEINWERKTECHNIK & MESSTECHNIK, 1981, 89 (05) :225-228
[27]   STRESS COMPENSATION IN LASER-DIODES [J].
KOYAMA, H ;
NISHIOKA, T ;
ISSHIKI, K ;
NAMIZAKI, H ;
KAWAZU, S .
APPLIED PHYSICS LETTERS, 1983, 43 (08) :733-735
[28]   MODULATOR FOR ELECTROLUMINESCENT AND LASER-DIODES [J].
KIRILLOV, AI ;
MATVEEV, IN ;
POLETAEV, BV .
PRIBORY I TEKHNIKA EKSPERIMENTA, 1972, (04) :134-&
[29]   LASER-DIODES MADE OF PBGETE [J].
KURBATOV, AL ;
SHUBIN, MV ;
STARIK, PM ;
LUCHITSKII, RM ;
BRITOV, AD ;
POLCHKOVA, ND .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (01) :120-121
[30]   OHMIC CONTACTS FOR LASER-DIODES [J].
LADANY, I ;
MARINELLI, DP .
RCA REVIEW, 1983, 44 (01) :101-109
12345