JOSEPHSON INTEGRATED-CIRCUIT PROCESS FOR SCIENTIFIC APPLICATIONS

被引：30
作者：
SANDSTROM, RL
KLEINSASSER, AW
GALLAGHER, WJ
RAIDER, SI
机构：
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1987年 / 23卷 / 02期
关键词：
D O I：
10.1109/TMAG.1987.1065115
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1484 / 1488
页数：5
相关论文
共 50 条
[41]   INTEGRATED-CIRCUIT DEVELOPMENT [J].
BROTHERS, JS .
RADIO AND ELECTRONIC ENGINEER, 1973, 43 (1-2) :39-48
[42]   GENESIS OF INTEGRATED-CIRCUIT [J].
WOLFF, MF .
IEEE SPECTRUM, 1976, 13 (08) :44-53
[43]   INTEGRATED-CIRCUIT TESTING [J].
BARBER, MR ;
ZACHARIAS, A .
BELL LABORATORIES RECORD, 1977, 55 (05) :124-130
[44]   LASER PROJECTION PATTERNED ALUMINUM METALLIZATION FOR INTEGRATED-CIRCUIT APPLICATIONS [J].
BLONDER, GE ;
HIGASHI, GS ;
FLEMING, CG .
APPLIED PHYSICS LETTERS, 1987, 50 (12) :766-768
[45]   BICMOS INTEGRATED-CIRCUIT FOR CAPACITIVE PRESSURE SENSORS IN AUTOMOTIVE APPLICATIONS [J].
DONDON, P ;
ZARDINI, C ;
AUCOUTURIER, JL .
SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 :596-599
[46]   SUPREM 3.5 - PROCESS MODELING OF GAAS INTEGRATED-CIRCUIT TECHNOLOGY [J].
DEAL, MD ;
HANSEN, SE ;
SIGMON, TW .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1989, 8 (09) :939-951
[47]   ION-IMPLANTED BIPOLAR SILICON INTEGRATED-CIRCUIT PROCESS [J].
SANDERS, IR .
MICROELECTRONICS AND RELIABILITY, 1977, 16 (01) :75-80
[48]   SOI technology for radio-frequency integrated-circuit applications [J].
Yang, Rong ;
Qian, He ;
Li, Junfeng ;
Xu, Qiuxia ;
Hai, Chaohe ;
Han, Zhengsheng .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (06) :1310-1316
[49]   CHEMICAL VAPOR-DEPOSITION OF METALS FOR INTEGRATED-CIRCUIT APPLICATIONS [J].
GREEN, ML ;
LEVY, RA .
JOURNAL OF METALS, 1985, 37 (06) :63-71
[50]   THIN-FILM TUNGSTEN FOR SILICON INTEGRATED-CIRCUIT APPLICATIONS [J].
SINHA, AK .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, :487-490
12345