PLANAR MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A GAAS PRE-AMPLIFIER

被引：47

作者：

KOLBAS, RM ^{[1
]}

ABROKWAH, J ^{[1
]}

CARNEY, JK ^{[1
]}

BRADSHAW, DH ^{[1
]}

ELMER, BR ^{[1
]}

BIARD, JR ^{[1
]}

机构：

[1] HONEYWELL OPTOELECTR DIV,RICHARDSON,TX 75081

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期

关键词：

D O I：

10.1063/1.94507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：821 / 823

页数：3

共 13 条

[1]

CARNEY JK, 1982, 1982 GAAS I C S NEW, P38

[2]

CARNEY JK, UNPUB P SPIE, V408

[3]

Fukuzawa T., 1979, APPL PHYS LETT, V36, P181

[4] A MONOLITHIC INTEGRATION OF GAAS-GAAIAS BIPOLAR-TRANSISTOR AND HETEROSTRUCTURE LASER [J].

KATZ, J ;

BARCHAIM, N ;

CHEN, PC ;

MARGALIT, S ;

URY, I ;

WILT, D ;

YUST, M ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :211-213

[5] GAALAS/GAAS MOCVD SELECTIVE EPITAXY FOR MONOLITHIC OPTICAL-DEVICE INTEGRATION WITH COMPLEX GAAS ICS [J].

KIM, ME ;

HONG, CS ;

KASEMSET, D ;

COLEMAN, JJ ;

BERNESCUT, R ;

PATEL, NB ;

DAPKUS, PD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) :1674-1675

[6]

KOLBAS R, 1982, P SOC PHOTO-OPT INST, V321, P94, DOI 10.1117/12.933232

[7]

KOLBAS RM, UNPUB

[8] INTEGRATION OF AN INJECTION-LASER WITH A GUNN OSCILLATOR ON A SEMI-INSULATING GAAS SUBSTRATE [J].

LEE, CP ;

MARGALIT, S ;

URY, I ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1978, 32 (12) :806-807

[9] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRONICS LETTERS, 1980, 16 (10) :353-355

[10]

MILANO RA, 1979, I PHYSICS C SER, V45, P411

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