LATTICE MISFIT AND ITS COMPENSATION IN SI-EPITAXIAL LAYER BY DOPING WITH GERMANIUM AND CARBON

被引：21

作者：

LEE, YT ^{[1
]}

MIYAMOTO, N ^{[1
]}

NISHIZAWA, J ^{[1
]}

机构：

[1] TOHOKU UNIV,RES INST ELECT COMMUN,SENDAI,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 04期

关键词：

D O I：

10.1149/1.2134254

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：530 / 535

页数：6

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