OPTIMIZATION OF OXYGEN-IMPLANTED SILICON SUBSTRATES FOR CMOS DEVICES BY ELECTRICAL CHARACTERIZATION

被引：9

作者：

FOSTER, DJ

BUTLER, AL

BOLBOT, PH

ALDERMAN, JC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 03期

关键词：

D O I：

10.1109/T-ED.1986.22494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：354 / 360

页数：7

共 14 条

[1]

DAS K, 1981, I PHYS C SER, V60, P301

[2]

Foster D. J., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P804

[3]

FOSTER DJ, 1983, ELECTRON LETT, V19, P648

[4] FORMATION OF BURIED INSULATING LAYERS IN SILICON BY THE IMPLANTATION OF HIGH-DOSES OF OXYGEN [J].

HEMMENT, PLF ;

MAYDELLONDRUSZ, E ;

STEPHENS, KG ;

BUTCHER, J ;

IOANNOU, D ;

ALDERMAN, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :157-164

[5]

HEMMENT PLF, 1983, P ISIAT KYOTO

[6] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

ELECTRONICS LETTERS, 1978, 14 (18) :593-594

[7]

IZUMI K, 1983, 1982 S VLSI, P10

[8] SURFACE RESTORATION OF OXYGEN-IMPLANTED SILICON [J].

KIM, MJ ;

BROWN, DM ;

GARFINKEL, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1991-1999

[9] SURFACE SILICON CRYSTALLINITY AND ANOMALOUS COMPOSITION PROFILES OF BURIED SIO2 AND SI3N4 LAYERS FABRICATED BY OXYGEN AND NITROGEN IMPLANTATION IN SILICON [J].

MAEYAMA, S ;

KAJIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05) :744-751

[10] OPTIMIZATION OF IMPLANTATION CONDITIONS FOR THE FORMATION OF BURIED SIO2 LAYERS IN SILICON [J].

MOSSADEQ, H ;

BENNETT, RJ ;

ANAND, KV .

ELECTRONICS LETTERS, 1982, 18 (05) :215-216

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