INTENSITY OSCILLATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：182
作者：
SAKAMOTO, T
KAWAI, NJ
NAKAGAWA, T
OHTA, K
KOJIMA, T
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期
关键词：
D O I：
10.1063/1.96091
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：617 / 619
页数：3
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