ANALYSIS OF SURFACE-INDUCED DEGRADATION OF GAAS POWER MESFETS

被引：7
|
作者：
DUMAS, JM [1 ]
LECROSNIER, D [1 ]
BRESSE, JF [1 ]
机构：
[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 04期
关键词：
D O I：
10.1109/EDL.1985.26093
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：192 / 194
页数：3
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