Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2\ after high temperature oxidation

被引：4

作者：

Li Yanyue ^{[1
]}

Deng Xiaochuan ^{[1
]}

Liu Yunfeng ^{[2
]}

Zhao Yanli ^{[3
]}

Li Chengzhan ^{[3
]}

Chen Xixi ^{[1
]}

Zhang Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

[2] Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China

[3] Zhuzhou CSR Times Elect Co Ltd, Power Elect Business Unit, Zhuzhou 412001, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2015年 / 36卷 / 09期

基金：

中国国家自然科学基金;

关键词：

C - V characteristics; 4H-SiC MOS; post-oxidation annealing; SiC/SiO2;

D O I：

10.1088/1674-4926/36/9/094003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The interface properties of 4H-SiC metal-oxide-semiconductor (MOS) capacitors with post-oxidation annealing (POA) in nitric oxide (NO) ambient after high temperature (1300 degrees C) oxidation have been investigated using capacitance-voltage (C - V) measurements. The experimental results show that the interface states density (D-it) can be obviously decreased by the POA in NO ambient (NO-POA) and further reduced with increasing POA temperature and time. In the meantime significant reduction of the interface states density and oxidation time can be achieved at the higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. The dependence of D-it on POA temperature and time has been also discussed in detail.

引用

页数：4

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