TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN III-V SEMICONDUCTOR-LASERS - EXPERIMENTAL PREDICTION AND EXPLANATION

被引：23

作者：

SU, CB

OLSHANSKY, R

MANNING, J

POWAZINIK, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 11期

关键词：

D O I：

10.1063/1.94634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1030 / 1032

页数：3

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[1] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION
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[6] MEASUREMENTS OF THRESHOLD CARRIER DENSITY OF III-V SEMICONDUCTOR-LASER DIODES
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[7] MEASUREMENT OF RADIATIVE RECOMBINATION COEFFICIENT AND CARRIER LEAKAGE IN 1.3-MU-INGAASP LASERS WITH LIGHTLY DOPED ACTIVE LAYERS
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[J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1108 - 1110
[8] CARRIER LIFETIME MEASUREMENT FOR DETERMINATION OF RECOMBINATION RATES AND DOPING LEVELS OF III-V SEMICONDUCTOR LIGHT-SOURCES
SU, CB
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (09) : 833 - 835
[9] NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS
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[J]. ELECTRONICS LETTERS, 1980, 16 (01) : 42 - 44
[10] ANALYSIS OF THRESHOLD TEMPERATURE CHARACTERISTICS FOR INGAASP-INP DOUBLE HETEROJUNCTION LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3172 - 3175