GAMBIT - GATE MODULATED BIPOLAR-TRANSISTOR

被引：0

作者：

BALIGA, BJ ^{[1
]}

HOUSTON, DE ^{[1
]}

KRISHNA, S ^{[1
]}

机构：

[1] GE, CORPORATE RES & DEV CTR, SOLID STATE POWER TECHNOL BRANCH, POB 8, SCHENECTADY, NY 12301 USA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 11期

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：937 / +

页数：1

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