GAMBIT - GATE MODULATED BIPOLAR-TRANSISTOR

被引：0

作者：

BALIGA, BJ ^{[1
]}

HOUSTON, DE ^{[1
]}

KRISHNA, S ^{[1
]}

机构：

[1] GE, CORPORATE RES & DEV CTR, SOLID STATE POWER TECHNOL BRANCH, POB 8, SCHENECTADY, NY 12301 USA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 11期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：937 / +

页数：1

共 18 条

[1] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS [J].

BENDA, H ;

SPENKE, E .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1331-&

[2] A NEW MODE OF OPERATION FOR BULK NEGATIVE RESISTANCE OSCILLATORS [J].

COPELAND, JA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10) :1479-+

[3] EFFECTS OF SPACE-CHARGE LAYER WIDENING IN JUNCTION TRANSISTORS [J].

EARLY, JM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1401-1406

[4] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].

ESAKI, L .

PHYSICAL REVIEW, 1958, 109 (02) :603-604

[5]

FLETCHER NH, 1967, P IRE, V55, P862

[6] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&

[7] DIE ABHANGIGKEIT DER STROMDICHTE EINES P-I-N GLEICHRICHTERS VON DER BREITE SEINER MITTELZONE [J].

HERLET, A .

ZEITSCHRIFT FUR PHYSIK, 1955, 141 (03) :335-345

[8] NEW LAMBDA-TYPE NEGATIVE-RESISTANCE DEVICE OF INTEGRATED COMPLEMENTARY FET STRUCTURE [J].

KANO, G ;

IWASA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (07) :448-449

[9] NEGATIVE-RESISTANCE OF A MODIFIED INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

LEHOVEC, K ;

ZULEEG, R .

PROCEEDINGS OF THE IEEE, 1974, 62 (08) :1163-1165

[10] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J].

MISAWA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :137-+

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