FORMATION OF EPITAXIAL LAYERS OF GE ON SI SUBSTRATES BY GE IMPLANTATION AND OXIDATION

被引：98

作者：

FATHY, D

HOLLAND, OW

WHITE, CW

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 17期

关键词：

D O I：

10.1063/1.98671

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1337 / 1339

页数：3

共 9 条

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[4] DOPANT DEPENDENCE OF THE OXIDATION RATE OF ION-IMPLANTED SILICON [J].

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TRAUMULLER, E .

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[5] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

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SAH, CT ;

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[6]

HETTICH G, 1979, I PHYS C SER, V46, P500

[7] NOVEL OXIDATION PROCESS IN GE+-IMPLANTED SI AND ITS EFFECT ON OXIDATION-KINETICS [J].

HOLLAND, OW ;

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APPLIED PHYSICS LETTERS, 1987, 51 (07) :520-522

[8]

KRIVANEK OL, 1978, P INT TOPICAL C PHYS, P357

[9]

MEZEY G, 1976, ION IMPLANTATION SEM, P49

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