FORMATION OF EPITAXIAL LAYERS OF GE ON SI SUBSTRATES BY GE IMPLANTATION AND OXIDATION

被引：97
作者：
FATHY, D
HOLLAND, OW
WHITE, CW
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 17期
关键词：
D O I：
10.1063/1.98671
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1337 / 1339
页数：3
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