INITIAL VALUE-PROBLEM FROM SEMICONDUCTOR-DEVICE THEORY

被引：113

作者：

MOCK, MS

机构：

[1] NYU,COURANT INST MATH SCI,NEW YORK,NY 10012

[2] IBM CORP,SYST PROD DIV,E FISHKILL LAB,E FISHKILL,NY

来源：

SIAM JOURNAL ON MATHEMATICAL ANALYSIS | 1974年 / 5卷 / 04期

关键词：

D O I：

10.1137/0505061

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

引用

收藏

页码：597 / 612

页数：16

相关论文

共 13 条

[1] AN ACCURATE NUMERICAL ONE-DIMENSIONAL SOLUTION OF P-N JUNCTION UNDER ARBITRARY TRANSIENT CONDITIONS
DEMARI, A
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (11) : 1021 - +
[2] GOKHALE BV, 1970, IEEE T ELEC DEV, VED17, P594
[3] NEW EFFICIENT ONE-DIMENSIONAL ANALYSIS PROGRAM FOR JUNCTION DEVICE MODELING
HACHTEL, GD
JOY, RC
COOLEY, JW
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (01): : 86 - &
[4] Ladyzhenskaya O.A., 1968, LINEAR QUASILINEAR E, DOI DOI 10.1090/MMONO/023
[5] Ladyzhenskaya O.A., 1968, LINEAR QUASILINEAR E, V23
[6] EQUATIONS DESCRIBING STEADY-STATE CARRIER DISTRIBUTIONS IN A SEMICONDUCTOR DEVICE
MOCK, MS
[J]. COMMUNICATIONS ON PURE AND APPLIED MATHEMATICS, 1972, 25 (06) : 781 - 792
[7] 2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR
MOCK, MS
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 601 - 609
[8] COMPUTATION OF SEMICONDUCTOR DEVICE CURRENT CHARACTERISTICS BY FINITE-DIFFERENCE METHODS
MOCK, MS
[J]. JOURNAL OF ENGINEERING MATHEMATICS, 1973, 7 (03) : 193 - 205
[9] MOLL JL, 1964, PHYSICS SEMICONDUCTO
[10] Richtmyer R. D., 1967, DIFFERENCE METHODS I