EXPERIMENTAL INVESTIGATIONS OF SINGLE INJECTION IN COMPENSATED SILICON AT LOW TEMPERATURES

被引：45

作者：

GREGORY, BL

JORDAN, AG

机构：

来源：

PHYSICAL REVIEW A-GENERAL PHYSICS | 1964年 / 134卷 / 5A期

关键词：

D O I：

10.1103/PhysRev.134.A1378

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1378 / &

共 13 条

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