STUDY OF DEEP-LEVEL DEFECT BEHAVIOR IN RAPID THERMAL ANNEALED FE-DOPED SEMIINSULATING INP

被引：9
|
作者：
KADOUN, A
MARRAKCHI, G
KALBOUSSI, A
BARBIER, D
GUILLOT, G
机构：
[1] Laboratoire de Physique de la Matière (URA CNRS 358), INSA de Lyon, 69621 Villeurbanne Cedex, Bat 502
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 33卷 / 2-3期
关键词：
INDIUM PHOSPHIDES; IRON; DEFECTS; THERMAL PROPERTIES;
D O I：
10.1016/0921-5107(94)01186-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of rapid thermal annealing (RTA) on deep level defects behaviour in Fe-doped semi-insulating InP has been studied by photoinduced current transient spectroscopy. Three samples were annealed at 600 degrees C, 700 degrees C and 800 degrees C for a fixed plateau duration of 15 s in a RTA commercially-available furnace. We show that RTA leads to the disappearance of the usually observed 0.66 eV Fe-related level and the formation of three deep traps having the activation energies 0.1, 0.31 and 0.54 eV. The possible involvement of phosphorus vacancy related complexes and the metastability of iron in the compensation mechanism after annealing is suggested.
引用
收藏
页码：188 / 191
页数：4
相关论文
共 50 条
  • [21] Origin of deep level defect related photoluminescence in annealed InP
    Zhao, Youwen
    Dong, Zhiyuan
    Miao, Shanshan
    Deng, Aihong
    Yang, Jun
    Wang, Bo
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (12)
  • [22] FE INCORPORATION AND PRECIPITATION IN SEMIINSULATING FE-DOPED INP GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    CHU, SNG
    LOGAN, RA
    HA, NT
    NAKAHARA, S
    KARLICEK, RF
    GRENKO, JA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (01) : 242 - 246
  • [23] Origin of deep level defect related photoluminescence in annealed InP
    Zhao, Youwen
    Dong, Zhiyuan
    Miao, Shanshan
    Deng, Aihong
    Yang, Jun
    Wang, Bo
    Journal of Applied Physics, 2006, 100 (12):
  • [24] ELECTRON-PARAMAGNETIC RESONANCE STUDY OF THERMAL DONORS IN FE-DOPED INP
    VONBARDELEBEN, HJ
    STIEVENARD, D
    KAINOSHO, K
    ODA, O
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (12) : 7392 - 7396
  • [25] Photoluminescence from deep levels in Fe-doped InP substrates
    Yamada, M
    Fukuzawa, M
    COMPOUND SEMICONDUCTORS 2002, 2003, 174 : 77 - 80
  • [26] OTCS STUDY OF DEFECT STATE IN FE-DOPED SEMI-INSULATING INP INDUCED BY ION IRRADIATION AND THERMAL ANNEALING
    YUBA, Y
    JUDAI, Y
    GAMO, K
    NAMBA, S
    PHYSICA B & C, 1983, 116 (1-3): : 461 - 466
  • [27] Investigation on deep level defects in rapid thermal annealed undoped n-type InP
    Janardhanam, V.
    Kumar, A. Ashok
    Reddy, V. Rajagopal
    Reddy, P. Narasimha
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2010, 21 (03) : 285 - 290
  • [28] Investigation on deep level defects in rapid thermal annealed undoped n-type InP
    V. Janardhanam
    A. Ashok Kumar
    V. Rajagopal Reddy
    P. Narasimha Reddy
    Journal of Materials Science: Materials in Electronics, 2010, 21 : 285 - 290
  • [29] MICROSTRUCTURE OF IMPLANTED AND RAPID THERMAL ANNEALED SEMIINSULATING POLYCRYSTALLINE OXYGEN-DOPED SILICON
    ALFORD, TL
    YANG, DK
    MASZARA, W
    OZGUZ, VH
    WORTMAN, JJ
    ROZGONYI, GA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 998 - 1003
  • [30] PHOTOLUMINESCENCE STUDY OF THE SI-IMPLANTED AND RAPID THERMAL ANNEALED INP-FE
    RAO, MV
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) : 337 - 341
12345