P-TYPE DOPING OF ZNSE WITH A NOVEL NITROGEN EXCITER

被引：5

作者：

MATSUMOTO, T

INABA, T

YODA, Y

EGASHIRA, K

KATO, T

AKITSU, T

机构：

[1] Department of Electronic Engineering, Yamanashi University, Kofu, 400

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90841-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A novel nitrogen exciter for p-type doping of ZnSe has been developed. It is of a simple structure, easy to handle and to maintain, of a high reliability, and inexpensive. Emission spectra from excited nitrogen and doping efficiency are studied for different operating conditions of the exciter. Substrate temperature dependence of net acceptor concentrations are also examined. Net acceptor concentrations as high as 8 X 10(17) cm-3 are readily obtained.

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收藏

页码：403 / 407

页数：5

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