THE MECHANISM OF THE ANODIC-OXIDATION OF SILICON IN ACIDIC FLUORIDE SOLUTIONS REVISITED

被引：110
作者：
GERISCHER, H
ALLONGUE, P
KIELING, VC
机构：
[1] CNRS,UPR 15,F-75005 PARIS,FRANCE
[2] UFRGS,CORROSAO & PROTECAO METAIS LAB,BR-90000 PORTO ALEGRE,RS,BRAZIL
来源：
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1993年 / 97卷 / 06期
关键词：
ELECTROCHEMISTRY; ETCHING; INTERFACES; SEMICONDUCTORS;
D O I：
10.1002/bbpc.19930970602
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The present experience of the electrochemical dissolution of silicon and previous assumptions upon the mechanism are briefly reviewed. A new model is developed which explains how the coverage of the surface by hydrogen can be maintained in spite of the continuous anodic dissolution.
引用
收藏
页码：753 / 756
页数：4
相关论文
共 39 条
[1]   ETCHING OF SILICON IN NAOH SOLUTIONS .2. ELECTROCHEMICAL STUDIES OF N-SI(111) AND N-SI(100) AND MECHANISM OF THE DISSOLUTION [J].
ALLONGUE, P ;
COSTAKIELING, V ;
GERISCHER, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (04) :1018-1026
[2]   ETCHING OF SILICON IN NAOH SOLUTIONS .1. INSITU SCANNING TUNNELING MICROSCOPIC INVESTIGATION OF N-SI(111) [J].
ALLONGUE, P ;
COSTAKIELING, V ;
GERISCHER, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (04) :1009-1018
[3]  
BITZER T, UNPUB APPL PHYS LETT
[4]   ELECTROCHEMICAL AND OPTICAL STUDIES OF SILICON DISSOLUTION IN AMMONIUM FLUORIDE SOLUTIONS [J].
BLACKWOOD, DJ ;
BORAZIO, A ;
GREEF, R ;
PETER, LM ;
STUMPER, J .
ELECTROCHIMICA ACTA, 1992, 37 (05) :889-896
[5]   EXPERIMENTS ON THE INTERFACE BETWEEN GERMANIUM AND AN ELECTROLYTE [J].
BRATTAIN, WH ;
GARRETT, CGB .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (01) :129-176
[6]   INFRARED-SPECTROSCOPY OF SI(111) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].
BURROWS, VA ;
CHABAL, YJ ;
HIGASHI, GS ;
RAGHAVACHARI, K ;
CHRISTMAN, SB .
APPLIED PHYSICS LETTERS, 1988, 53 (11) :998-1000
[7]   INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].
CHABAL, YJ ;
HIGASHI, GS ;
RAGHAVACHARI, K ;
BURROWS, VA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :2104-2109
[8]   EVIDENCE OF DISSOCIATION OF WATER ON THE SI(100)2X1 SURFACE [J].
CHABAL, YJ ;
CHRISTMAN, SB .
PHYSICAL REVIEW B, 1984, 29 (12) :6974-6976
[9]   ANODIC-DISSOLUTION OF P-TYPE AND N-TYPE SILICON - KINETIC-STUDY OF THE CHEMICAL MECHANISM [J].
EDDOWES, MJ .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1990, 280 (02) :297-311
[10]   MECHANISMS OF DECOMPOSITION OF SEMICONDUCTORS BY ELECTROCHEMICAL OXIDATION AND REDUCTION [J].
GERISCHE.H ;
MINDT, W .
ELECTROCHIMICA ACTA, 1968, 13 (06) :1329-&
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