EXCITON RELAXATION DYNAMICS IN GAAS/ALGAAS SINGLE QUANTUM-WELL HETEROSTRUCTURES

被引：0
|
作者：
ROUSSIGNOL, P
VINATTIERI, A
CARRARESI, L
COLOCCI, M
DELALANDE, C
机构：
[1] LENS, I-50125 FLORENCE, ITALY
[2] ECOLE NORM SUPER, F-75231 PARIS 05, FRANCE
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 126期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present an experimental study of the photoluminescence risetime tau(R) of single GaAs/AlGaAs quantum well structures. The dependence of tau(R) on the excitation energy is investigated for different temperatures and excitation intensities. A very slow relaxation process is found at 4K when the excitation energy is resonant with the light-hole exciton. Both temperature or excitation intensity increase makes the relaxation process faster. A tentative explanation in terms of a reduced free carrier-exciton scattering efficiency as a consequence of the resonant excitation is given.
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页码：419 / 422
页数：4
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