REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS

被引：134
作者：
CSEPREGI, L
KULLEN, RP
MAYER, JW
SIGMON, TW
机构：
[1] CALTECH,PASADENA,CA 91125
[2] OREGON STATE UNIV,CORVALLIS,OR 97331
来源：
SOLID STATE COMMUNICATIONS | 1977年 / 21卷 / 11期
关键词：
D O I：
10.1016/0038-1098(77)90009-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1019 / 1021
页数：3
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[3]   REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].
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APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93
[4]   CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].
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Paul W., 1973, ADV PHYS, V22, P529
[8]  
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