MINORITY-CARRIER EMISSION EFFECT IN DEEP LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS ON SCHOTTKY DIODES

被引：15

|

作者：

LEE, WI

BORREGO, JM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.340352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5357 / 5362

页数：6

相关论文

共 50 条

[1] DETECTION OF MINORITY-CARRIER DEFECTS BY DEEP LEVEL TRANSIENT SPECTROSCOPY USING SCHOTTKY-BARRIER DIODES
AURET, FD
NEL, M
JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2546 - 2549
[2] A QUANTITATIVE TREATMENT FOR DEEP LEVEL TRANSIENT SPECTROSCOPY UNDER MINORITY-CARRIER INJECTION
FOURCHES, N
JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 209 - 214
[3] Observation of minority-carrier traps in Schottky diodes with a high barrier and a compensated near-contact region using deep-level transient spectroscopy
E. N. Agafonov
U. A. Aminov
A. N. Georgobiani
L. S. Lepnev
Semiconductors, 2001, 35 : 48 - 53
[4] Observation of minority-carrier traps in Schottky diodes with a high barrier and a compensated near-contact region using deep-level transient spectroscopy
Agafonov, EN
Aminov, UA
Georgobiani, AN
Lepnev, LS
SEMICONDUCTORS, 2001, 35 (01) : 48 - 53
[5] Erratum. 'A quantitative treatment for deep level transient spectroscopy under minority-carrier injection'
1600, (71):
[6] MINORITY-CARRIER INJECTION IN GE-AG SCHOTTKY DIODES
MANIFACIER, JC
FILLARD, JP
SOLID-STATE ELECTRONICS, 1976, 19 (04) : 289 - 290
[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF MINORITY-CARRIER TRAPS IN NEUTRON-IRRADIATED SILICON
TOKUDA, Y
USAMI, A
JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2325 - 2327
[8] Observation of minority-carrier traps in InGaN/GaN multiple-quantum-well light-emitting diodes during deep-level transient spectroscopy measurements
Kim, JW
Song, GH
Lee, JW
APPLIED PHYSICS LETTERS, 2006, 88 (18)
[9] PROBING THE MINORITY-CARRIER QUASI-FERMI LEVEL IN EPITAXIAL SCHOTTKY-BARRIER DIODES
WAGNER, LF
CHUANG, CT
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) : 753 - 757
[10] Measurements of deep trap concentration in diodes with a high Schottky barrier by deep-level transient spectroscopy
Agafonov, EN
Georgobiani, AN
Lepnev, LS
SEMICONDUCTORS, 2002, 36 (06) : 655 - 658

← 1 2 3 4 5 →