RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS

被引：193
作者：
GRUNTHANER, FJ
GRUNTHANER, PJ
MASERJIAN, J
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期
关键词：
D O I：
10.1109/TNS.1982.4336387
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1462 / 1466
页数：5
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共 32 条
  • [1] RADIATION EFFECTS IN SILICA AT LOW TEMPERATURES
    ARNOLD, GW
    COMPTON, WD
    [J]. PHYSICAL REVIEW, 1959, 116 (04): : 802 - 811
  • [2] BLANC J, 1978, ELECTROCHEM SOC P, P100
  • [3] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS
    CAPLAN, PJ
    POINDEXTER, EH
    DEAL, BE
    RAZOUK, RR
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854
  • [4] CAPLAN PJ, 1980, PHYSICS MOS INSULATO, P306
  • [5] Cheng Y., 1977, PROG SURF SCI, V8, P181
  • [6] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS
    FEIGL, FJ
    YOUNG, DR
    DIMARIA, DJ
    LAI, S
    CALISE, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682
  • [7] GRATELLO VJ, 1980, J APPL PHYS, V51, P6160
  • [8] COLOR-CENTERS IN VITREOUS SILICA
    GREAVES, GN
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (04): : 447 - 466
  • [9] Griscom D.L., 1978, PHYSICS SIO2 ITS INT, P232
  • [10] THE CHEMICAL-STRUCTURE OF TRAPPED CHARGE SITES FORMED AT THE SI/SIO2 INTERFACE BY IONIZING-RADIATION AS DETERMINED BY XPS
    GRUNTHANER, FJ
    LEWIS, BF
    MASERJIAN, J
    MADHUKAR, A
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 747 - 750
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