RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS

被引：194
作者：
GRUNTHANER, FJ
GRUNTHANER, PJ
MASERJIAN, J
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期
关键词：
D O I：
10.1109/TNS.1982.4336387
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1462 / 1466
页数：5
相关论文
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