LATTICE STRUCTURE IN NI-SI COEVAPORATED FILMS

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] INTERFACIAL ORDER IN EPITAXIAL NISI2 [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547

[3] CHU WK, 1978, BACKSCATTERING SPECT, P128

[4] GALASS FS, 1970, STRUCTURE PROPERTIES

[5] GIBSON JM, 1981, C MICROSCOPY SEMICON

[6] Hanson M., 1958, CONSTITUTION BINARY

[7] STRUCTURE MODELING OF METAL-SILICIDE LAYERS BY USING AXIAL AND PLANAR CHANNELING TECHNIQUES [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 417 - 420

[8] MURARKA SP, 1980, J VAC SCI TECHNOL, V17, P4

[9] Sze S. M., 1969, PHYSICS SEMICONDUCTO, P567

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] INTERFACIAL ORDER IN EPITAXIAL NISI2 [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547

[3] CHU WK, 1978, BACKSCATTERING SPECT, P128

[4] GALASS FS, 1970, STRUCTURE PROPERTIES

[5] GIBSON JM, 1981, C MICROSCOPY SEMICON

[6] Hanson M., 1958, CONSTITUTION BINARY

[7] STRUCTURE MODELING OF METAL-SILICIDE LAYERS BY USING AXIAL AND PLANAR CHANNELING TECHNIQUES [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 417 - 420

[8] MURARKA SP, 1980, J VAC SCI TECHNOL, V17, P4

[9] Sze S. M., 1969, PHYSICS SEMICONDUCTO, P567