EFFECTS OF ZN CROSS DIFFUSION ON PROPERTIES OF N(ALXGA1-XAS)-P(GAAS) HETEROJUNCTIONS

被引：10

作者：

CHEUNG, DT ^{[1
]}

SHEN, CC ^{[1
]}

PEARSON, GL ^{[1
]}

机构：

[1] STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 12期

关键词：

D O I：

10.1063/1.321590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5226 / 5228

页数：3

共 10 条

[1]

ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1373

[2]

ALFEROV ZI, 1972, SOV PHYS SEMICOND+, V6, P310

[3]

ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1234

[4]

ALFEROV ZI, 1970, P INT C PHYS CHEM SE, V2, P7

[5] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[6]

CASEY HC, 1975, POINT DEFECTS SOLIDS, V2

[7] SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS [J].

CHEUNG, DT ;

CHIANG, SY ;

PEARSON, GL .

SOLID-STATE ELECTRONICS, 1975, 18 (03) :263-266

[8] SCANNING ELECTRON-MICROSCOPE CHARACTERIZATION OF GAP RED-EMITTING DIODES [J].

HACKETT, WH ;

SAUL, RH ;

KAMMLOTT, GW ;

DIXON, RW .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2857-+

[9] N-N SEMICONDUCTOR HETEROJUNCTIONS [J].

OLDHAM, WG ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :121-132

[10] GRADED-GAP ALXGA1-XAS-GAAS HETEROJUNCTION [J].

WOMAC, JF ;

REDIKER, RH .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4129-&

← 1 →