HIGH RADIANCE LIGHT-EMITTING DIODES

被引：18

作者：

HORIKOSHI, Y ^{[1
]}

TAKANASHI, Y ^{[1
]}

IWANE, G ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 03期

关键词：

D O I：

10.1143/JJAP.15.485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：485 / 492

页数：8

共 13 条

[1] ELECTROMAGNETIC THEORY OF HETEROSTRUCTURE INJECTION LASERS [J].

ADAMS, MJ ;

CROSS, M .

SOLID-STATE ELECTRONICS, 1971, 14 (09) :865-+

[2] SMALL-AREA HIGH-CURRENT-DENSITY GAAS ELECTROLUMINESCENT DIODES AND A METHOD OF OPERATION FOR IMPROVED DEGRADATION CHARACTERISTICS [J].

BURRUS, CA ;

DAWSON, RW .

APPLIED PHYSICS LETTERS, 1970, 17 (03) :97-&

[3] EFFICIENT SMALL-AREA GAAS-GA1-XA1XAS HETEROSTRUCTURE ELECTROLUMINESCENT DIODES COUPLED TO OPTICAL FIBERS [J].

BURRUS, CA ;

ULMER, EA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1263-&

[4] ELECTROLUMINESCENCE IN AMPNOTERIC SILICON-DOPED GAAS DIODES .2. TRANSIENT RESPONSE [J].

BYER, NE .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1602-&

[5]

COHEN LG, 1972, AT&T TECH J, V51, P573, DOI 10.1002/j.1538-7305.1972.tb01937.x

[6] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J].

DELOACH, BC ;

HAKKI, BW ;

HARTMAN, RL ;

DASARO, LA .

PROCEEDINGS OF THE IEEE, 1973, 61 (07) :1042-1044

[7]

Ennaceur A., 1971, OPT COMMUN, V31, P47, DOI [DOI 10.1016/0030-4018(71)90157-X, 10.1016/0166-4328(88)90157-x]

[8] HIGH-RADIANCE LIGHT-EMITTING DIODES [J].

ETTENBERG, M ;

HUDSON, KC ;

LOCKWOOD, HF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (10) :987-991

[9] PROPERTIES OF EFFICIENT SILICON-COMPENSATED ALXGA1-XAS ELECTROLUMINESCENT DIODES [J].

KRESSEL, H ;

HAWRYLO, FZ ;

ALMELEH, N .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) :2248-&

[10] MEASUREMENTS OF REFRACTIVE-INDEX STEP AND OF CARRIER CONFINEMENT AT (AIGA) AS-GAAS HETEROJUNCTIONS [J].

KRESSEL, H ;

LOCKWOOD, HF ;

BUTLER, JK .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4095-4097

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