HALL INSULATOR IN A 2-DIMENSIONAL ELECTRON-SYSTEM IN SILICON IN THE EXTREME QUANTUM LIMIT

We report diagonal- and Hall resistance measurements of the localized two-dimensional electron system in silicon in the high-field extreme quantum limit. The Hall resistance has been found to be almost independent of temperature and close to its classical value, B/n(s)ec, while the diagonal resistivity diverges at T --> 0. There is no evidence for nonlocal resistance due to special conductivity paths. These results support existence of the recently predicted Hall insulator state in silicon in a high magnetic field.