SIZE EFFECTS AND CHARGE-DENSITY-WAVE PINNING IN NB1-XTIXSE3 - EVIDENCE FOR WEAK PINNING BY A NONISOELECTRONIC IMPURITY

被引：26

作者：

DICARLO, DA ^{[1
]}

MCCARTEN, J ^{[1
]}

ADELMAN, TL ^{[1
]}

MAHER, M ^{[1
]}

THORNE, RE ^{[1
]}

机构：

[1] CORNELL UNIV,CTR MAT SCI,ITHACA,NY 14853

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.42.7643

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report measurements of the threshold electric field ET for charge-density-wave (CDW) depinning in Ti-doped NbSe3. In crystals with large cross-sectional dimensions, ET varies with the residual resistance ratio rR as ETrR-1.3. In small crystals, ET varies inversely with crystal thickness and rR. Because of pinning by residual defects, qualitatively different ET-rR relations may be obtained for different weak-pinning impurities. We show that the Ti-concentration, crystal-size, and CDW-transition dependence of ET are consistent with weak CDW pinning and with earlier results for Ta impurities, and indicate a Ti pinning strength roughly 40 times larger than that of Ta. © 1990 The American Physical Society.

引用

页码：7643 / 7646

页数：4

共 21 条

[1] IMPURITY-INDUCED PINNING, DAMPING AND METASTABILITY OF INTERCHAIN-COUPLED CHARGE-DENSITY WAVES [J].