THEORY FOR THE PLASMA ANODIZATION OF SILICON UNDER CONSTANT VOLTAGE AND CONSTANT CURRENT CONDITIONS

被引：31

作者：

TAYLOR, S

ECCLESTON, W

BARLOW, KJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6515 / 6522

页数：8

共 23 条

[1] AN IMPROVED THEORY FOR THE PLASMA ANODIZATION OF SILICON [J].

BARLOW, K ;

KIERMASZ, A ;

ECCLESTON, W .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (04) :181-183

[2]

BARLOW KJ, 1985, IEE ELECTRON LETT, V21, P916

[3] THEORY OF THE OXIDATION OF METALS [J].

CABRERA, N ;

MOTT, NF .

REPORTS ON PROGRESS IN PHYSICS, 1948, 12 :163-184

[4] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[5] PLASMA ANODIZATION OF SILICON AT ROOM-TEMPERATURE [J].

DIMITRIOU, P ;

GOURRIER, S .

REVUE DE PHYSIQUE APPLIQUEE, 1981, 16 (08) :419-424

[6] OXIDE-GROWTH IN AN RF PLASMA [J].

FROMHOLD, AT ;

BAKER, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6377-6392

[7] ANODIZATION OF SILICON IN RF INDUCED OXYGEN PLASMA [J].

HO, VQ ;

SUGANO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :103-106

[8]

HO VQ, 1980, IEEE T ELECTRON DEV, V27, P1436, DOI 10.1109/T-ED.1980.20053

[9] EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION [J].

JORGENSEN .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :874-&

[10] THEORY OF THE GROWTH OF SIO2 IN AN OXYGEN PLASMA [J].

KIERMASZ, A ;

ECCLESTON, W ;

MORUZZI, JL .

SOLID-STATE ELECTRONICS, 1983, 26 (12) :1167-1172

← 1 2 3 →